| Summary: | 碩士 === 國立交通大學 === 電子研究所 === 82 === In the past few years, there has been an increasing interest in
the realization of vertical-cavity surface-emitting lasers
(VCSEL's). This is mainly due to the attractive features of
these devices such as on-wafer testing, and high-density 2D
arrays. To study the characteristics of these devices and to
determine the optimal device structure, a numerical simulator
for VCSEL's necessary. In this thesis, we develop a two-
dimensional for VCSEL's. The physical model includes the
Poisson equation, continuity equation, Schrodinger equation,
coupled-mode equation and photon rate equation. The result we
obtain from the simulation is the laser output power versus
current, band diagram, carrier concentration and optical wave
distributions. In addition, quantum-size-effects such as the
subband energies and the overlap integral for optical
transitions can be derived from the simulation. We also change
the device structure of VCSEL's such as the number of mirror
thickness of active layer and cavity size to investigate the
geometrical effect on the laser performance. The results of are
used as guidelines for VCSEL structure design and
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