Boron Penetration in Different Gate Microstructures of P+ Poly- Gate PMOS Capacitors
碩士 === 國立交通大學 === 電子研究所 === 82 === P型閘極P型金氧半元件中之硼擴散至氧化層效應,可以用多晶矽閘極予以 抑制.除此之外,在多晶矽閘極結構中的界面,可以進一步提高硼穿透所需 克服的位能障.應用多晶矽於閘極的上層,顯示出比較小的臨界電壓平移 值,較小的電子受陷速率,比較平滑的閘極表面形態和較大的崩潰電荷.在 多晶矽沉積後加上熱回火,硼穿透效應和氧化層品質可以同時達到改善的 目的....
Main Authors: | Kuei-Chi Juan, 阮桂棋 |
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Other Authors: | Chun-Yen Chang |
Format: | Others |
Language: | en_US |
Published: |
1994
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Online Access: | http://ndltd.ncl.edu.tw/handle/21247120342814951808 |
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