Fabrication and Simulation of Field Emission Devices

• Main Authors: Ming-Shang Chen, 陳銘祥
• Other Authors: Huang-Chung Cheng
• Format: Others
• Language: en_US
• Published: 1994
• Online Access: http://ndltd.ncl.edu.tw/handle/77474723084323177164

碩士 === 國立交通大學 === 電子研究所 === 82 === Advances in the fabrication of arrays of micro-scale gated field emitters over the last two decades have encouraged more workers to enter the field of vacuum microelectronics.In a field- emission-type electron source, a high field of 1-10 MV/cm is required to effectively overcome the tunneling barrier. There are several ways to reduce the operating voltage. First,the tip radius can be made as small as possible. Second, the distance between emitter and gate can be reduced. Third, a material with a low work function can be used.To this end, we fabricate self-aligned field emission devices using lateral oxidation sharpening technology. This process is simple and the gate aperture is smaller than the original mask size. Devices with volcano-shaped gate of various geometries are fabricated. To study the characteristics of the volcano devices, we develope a 2-D FED simulator that can handle arbitrary device structures.Devices with planar gate and volcano- shaped gate are evaluated in our study. We find the gate geometry effect plays an important role on device performance. The effects of device geometry parameters including the tip angle,the related tip-to-gate height,the emitter shape and the gate aperture on the device performance are also studied in this thesis.