| Summary: | 碩士 === 國立交通大學 === 電子研究所 === 82 === The luminescence properties of porous Si and porous SiGe was
studied in this thesis. The SiGe alloy and related
heterostructures have been a subject of intensive research
recently because of the possibility of fabracting high speed
devices. The porous SiGe and SiGe/Si heterostructures, however,
were never throughly studied before. In this thesis, various
porous Si and SiGe alloy layers with different thickness and
compositions were investigated. The luminescence behavior was
correlated with the layer parameters. It was found that the PL
line width decreases as the porous layer become thicker
indicating quantum behavior. The emission peak shifts toward
long wavelength in SiGe samples as Ge composition increases. In
SiGe/Si heterostructures, the intensity of the luminescence
from SiGe increase dramatically as a result of carrier
confinement provided by the heterostructure. The aging
behaviors of porous Si and porous SiGe were also studied. We
found that the luminescence intensity of SiGe has a much faster
degradation rate than Si. From FTIR measurement, we found that
the Si-H bonds are much weaker in SiGe than in Si. The
breakdown of the Si-H bonds causes the degradation of
luminescence in porous SiGe.
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