| Summary: | 碩士 === 國立交通大學 === 電子研究所 === 82 === This thesis studies the formation of PtSi contacted p﹢n
shallow junctions by ITS(implant-through-silicide)／ITM(
implant- through-metal) BF2﹢ implantation and rapid thermal
annealing ( RTA)technique. The experimental result shows that
RTA annealing results in less boron diffusion and powerful
implantation damage removing ability. High performance PtSi/p﹢
n diodes with a junc- tion depth of about 70nm and leakage
current density of 2nA/ｃ㎡ can be obtained with ITS／ITM BF2﹢
implantation followed by RTA 750℃/40s annealing. It is found
that the junction characteris- tics of the diodes made by ITM
scheme are generally superior to that of the diodes made by ITS
scheme. The dual implantation ( B﹢ + BF2﹢) scheme was also
employed to investigate the effect of F﹢ pre-implantation. It
turns out that the F﹢ pre-implan- tion leads to an
ultrashallow junction with improved high-tem- perature
stability. This is apparently due to pre-amorphization of Si
surface, which reduces the channeling effect of subsequent BF2
﹢ implantation, and more effective fluorine ions incorpation
into the PtSi／Si structure. The full rapid thermal
processing( RTP), which consists of PtSi silicidation by RTP
followed by RTA annealing, was also brief investigated.
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