| Summary: | 碩士 === 國立交通大學 === 電子研究所 === 82 === In this thesis, the investigation of Reactive Ion Etching ( RIE
) of GaAs, InP and InGaP with BCl3/SF6/Ar mixtures is reported.
The etch rate was measured in order to find the dependence on
RF power density, pressure, total gas flow rate and the ratio
of each gas in the mixtures. The morphology of etched surfaces
and self-bias were also in our concern. The ratio of BCl3 and
SF6 in gas mixtures has significant influence on etch rate.
Etching with both gases is much faster than that with only BCl3
or with only SF6. The addition of Ar may improve the morphology
of etched surfaces and sidewalls. Many analytical instruments,
such as SEM, SIMS, AES, XPS had been used to analyze morphology
and residuals on the etched surfaces.
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