Epitaxial growth of high Tc Tl-based 2223 phase superconducting thin films
碩士 === 國立交通大學 === 電子物理學系 === 82 === The epitaxial growth mechanism of high Tc Tl-based 2223 phase superconducting thin films were investigated. By using two -step method including DC-sputering and post-annealing, the effect of annealing tem...
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ndltd-TW-082NCTU04290102016-07-18T04:09:35Z http://ndltd.ncl.edu.tw/handle/38257840438015764192 Epitaxial growth of high Tc Tl-based 2223 phase superconducting thin films 磊晶狀鉈系2223相高溫超導薄膜製作研究 J.J. Li 黎俊基 碩士 國立交通大學 電子物理學系 82 The epitaxial growth mechanism of high Tc Tl-based 2223 phase superconducting thin films were investigated. By using two -step method including DC-sputering and post-annealing, the effect of annealing temperature, dwell time and thin film compen -sation which are the most important parameters to thin film epitaxial growth were studied. From optical microscope, SEM, EDX and XRD,we found the growth step of 2223 phase epitaxial thin films. The optimal annealing dwell time is 25 minutes. We found that high Jc thin films would be grown with furnace-cooling process, the suitable thin film compensation improves an optimal growth environment. T.M. Uen;Y.S. Gou 溫增明;郭義雄 1994 學位論文 ; thesis 59 zh-TW |
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碩士 === 國立交通大學 === 電子物理學系 === 82 === The epitaxial growth mechanism of high Tc Tl-based 2223 phase
superconducting thin films were investigated. By using two
-step method including DC-sputering and post-annealing, the
effect of annealing temperature, dwell time and thin film
compen -sation which are the most important parameters to thin
film epitaxial growth were studied. From optical microscope,
SEM, EDX and XRD,we found the growth step of 2223 phase
epitaxial thin films. The optimal annealing dwell time is 25
minutes. We found that high Jc thin films would be grown with
furnace-cooling process, the suitable thin film compensation
improves an optimal growth environment.
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author2 |
T.M. Uen;Y.S. Gou |
author_facet |
T.M. Uen;Y.S. Gou J.J. Li 黎俊基 |
author |
J.J. Li 黎俊基 |
spellingShingle |
J.J. Li 黎俊基 Epitaxial growth of high Tc Tl-based 2223 phase superconducting thin films |
author_sort |
J.J. Li |
title |
Epitaxial growth of high Tc Tl-based 2223 phase superconducting thin films |
title_short |
Epitaxial growth of high Tc Tl-based 2223 phase superconducting thin films |
title_full |
Epitaxial growth of high Tc Tl-based 2223 phase superconducting thin films |
title_fullStr |
Epitaxial growth of high Tc Tl-based 2223 phase superconducting thin films |
title_full_unstemmed |
Epitaxial growth of high Tc Tl-based 2223 phase superconducting thin films |
title_sort |
epitaxial growth of high tc tl-based 2223 phase superconducting thin films |
publishDate |
1994 |
url |
http://ndltd.ncl.edu.tw/handle/38257840438015764192 |
work_keys_str_mv |
AT jjli epitaxialgrowthofhightctlbased2223phasesuperconductingthinfilms AT líjùnjī epitaxialgrowthofhightctlbased2223phasesuperconductingthinfilms AT jjli lěijīngzhuàngshīxì2223xiānggāowēnchāodǎobáomózhìzuòyánjiū AT líjùnjī lěijīngzhuàngshīxì2223xiānggāowēnchāodǎobáomózhìzuòyánjiū |
_version_ |
1718351636538064896 |