The growth of GaSb,AlGaSb and characterization of electric tran sport in GaSb/AlGaSb/GaSb structure

• Main Authors: Pai-Yong Wang, 王派湧
• Other Authors: Jenn-Fong Chen
• Format: Others
• Language: zh-TW
• Published: 1994
• Online Access: http://ndltd.ncl.edu.tw/handle/64341494686902255280

碩士 === 國立交通大學 === 電子物理學系 === 82 === We used the metal organic chemical vapor deposition epitaxial in atmospheric pressure to study the growth of GaSb and AlGaSb on GaAs substrates and the current transport properties in GaSb/ AlXGa1-XSb/GaSb structures. In GaSb growth,the growth temperature is more strongly influence the growth condition than the V/III ratio.The TMSb Flow rate is also found to influence the GaSb growth condition. Under higher TMSb flow rate ，high quality GaSb layers can be grown at higher substrate temperation. The grown of AlXGa1-XSb is p-type. The quality of AlXGa1-XSb grown at 600℃ is better than that at 680℃. The mobility was reduced rapidly and the carrier concentration increase rapidly when Al was incorpoeated into GaSb crystal growth. In GaSb/AlXGa1-XSb/GaSb structures，the room- temperature current voltage characteristic shows a rectified feature when Al composition X is higher than 0.3. This rectified feature shows a valence-band distinuity in GaSb/ AlGaSb interface. The thermionic emission theorem was used to analyze the current transport mechanism.