The growth of GaSb,AlGaSb and characterization of electric tran sport in GaSb/AlGaSb/GaSb structure
碩士 === 國立交通大學 === 電子物理學系 === 82 === We used the metal organic chemical vapor deposition epitaxial in atmospheric pressure to study the growth of GaSb and AlGaSb on GaAs substrates and the current transport properties in GaSb/ AlXGa1-XSb/GaS...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
1994
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| Online Access: | http://ndltd.ncl.edu.tw/handle/64341494686902255280 |
| Summary: | 碩士 === 國立交通大學 === 電子物理學系 === 82 === We used the metal organic chemical vapor deposition epitaxial
in atmospheric pressure to study the growth of GaSb and AlGaSb
on GaAs substrates and the current transport properties in
GaSb/ AlXGa1-XSb/GaSb structures. In GaSb growth,the growth
temperature is more strongly influence the growth condition
than the V/III ratio.The TMSb Flow rate is also found to
influence the GaSb growth condition. Under higher TMSb flow rate
，high quality GaSb layers can be grown at higher substrate
temperation. The grown of AlXGa1-XSb is p-type. The quality of
AlXGa1-XSb grown at 600℃ is better than that at 680℃. The
mobility was reduced rapidly and the carrier concentration
increase rapidly when Al was incorpoeated into GaSb crystal
growth. In GaSb/AlXGa1-XSb/GaSb structures，the room-
temperature current voltage characteristic shows a rectified
feature when Al composition X is higher than 0.3. This
rectified feature shows a valence-band distinuity in GaSb/
AlGaSb interface. The thermionic emission theorem was used to
analyze the current transport mechanism.
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