The manufacture and analysis of double-heterostructure optoelectronic switch devices

• Main Authors: M.S.Chen, 陳明新
• Other Authors: Y.H.Wang,M.P.Houng
• Format: Others
• Language: en_US
• Published: 1994
• Online Access: http://ndltd.ncl.edu.tw/handle/87143448172587231273

碩士 === 國立成功大學 === 電機工程研究所 === 82 === The double-heterostructure optoelectronic switch(DOES) prepared by molecular beam epitaxy(MBE) have been success- fully fabricated.The switching properities of two-terminal and three- terminal devices are investigated.The experimental of changing the three terminal place and pssivative device is studies how they influence the voltage,current and optical controlled rate. Based on current continuity and charge neutrality equations,a model is given to study the characteristics of DOES by the method of iteration. Devices parameters,such as the doping concentration and thickness of P barrier layer, the concentraction and surface potential of active region, temperature are studies how they influence the characteris- tics of the switching devices. Finally,discuss the shift of switching and holding volt- ages.By the property of change switching voltage by appling a voltage and optical on the third terminal,we can demonstrate the implement of AND/OR logic gate successfully.