Large-area ACTFEL device prepared by MOCVD

• Main Authors: Pei-Ran Tsai, 蔡培仁
• Other Authors: M.Yokoyama； Y.K.Su
• Format: Others
• Language: en_US
• Published: 1994
• Online Access: http://ndltd.ncl.edu.tw/handle/24369962354617341180

碩士 === 國立成功大學 === 電機工程研究所 === 82 === In order to research large-area thin film electrolumin- escent (TFEL) devices , we grew ZnS thin film by the EL- MOCVD system . The uniformity of the thickness and crystallinity of the thin film has been studied , under the optimum condition : the subtrate temperature , the pressure of the reaction chamber , and the mole fraction H2S to DMZ are 225 degree , 30 torr and 20 .We resulted that the varia- tion of the thickness and the FWHM of the X-ray diffraction analysis are controlled below 5% when the flow of the main line was 3.5 SLM and the width of the slit were 2.0mm , 1.0 mm , 1.0mm , 1.0mm . The atomic ratio of S/Zn was evaluated by electron probe microanalyzer (EPMA) is very close to 1 . Besides , DES and DMZ have been studied . We resulted the FWHM of X-ray diffraction analysis was 0.147 under the cond- ition of the substrate temperature 225 degree , the pressure 30 torr and the mole fraction 4 . The crystallinity has been reduced very much . But , we found that the property of the ITO on the glasses had been destroied under the growth tempe- rture 450 degree . We may join exciting light on the slit to reduced the growth temperature .Finally , we had studied the dopant of Mn luminescence center . The BCPM was heated 140 degree and the flow was 0.3 SLM , so we can get the result the concentration of the Mn dopant was 3 wt% ,that is not the optimum result . The result must be further improved .