Laser Reflection Interferometry in-situ Charactization of Diamond Film Deposited by Chloromethane and Methane Reactants in a Hot-Filament CVD

• Main Authors: Chin-Ta Su, 蘇金達
• Other Authors: Professor Chuan-Nan Hong
• Format: Others
• Language: zh-TW
• Published: 1994
• Online Access: http://ndltd.ncl.edu.tw/handle/88592702809208874354

碩士 === 國立成功大學 === 化學工程研究所 === 82 === The laser reflective interferometry (LRI) has been set up to in-situ monitor the diamond film growth in a hot-filament Chemical vapor deposition reactor. It was then successfully employed to compare between the growth rates of diamond films using chloromethane and those using methane at the same conditions in order to study their growth mechanisms. At 5 torr, we could find that increased as the substrate temperature reduced the growth rate ratio of chloromethane to methane. For example, when the substrate temperature decreased from 850C to 650C, the ratio of growth rate increased from 1.03 to 1.39. However, at 30 torr, the growth rates of chloromethane and methane were almost the same at all substrate temperature. Furthermore, the difference of growth rates at 2 torr was even more pronounced than that at 5 torr. The ratio of growth rates increased from 1.24 to 1.65 as the substrate temperature dropped from 850C to 650C. The activation energies of diamond film deposition using rarious carbon sources could be accurately measured by the LRI method. For the diamond film growth using methane, the activa- tion energies are 5.3Kcal/ mol at high temperature(800~900C) and 11.8Kcal/mol at low temperatures (500~800C).