| Summary: | 碩士 === 國立成功大學 === 化學工程研究所 === 82 === The laser reflective interferometry (LRI) has been set up to
in-situ monitor the diamond film growth in a hot-filament
Chemical vapor deposition reactor. It was then successfully
employed to compare between the growth rates of diamond films
using chloromethane and those using methane at the same
conditions in order to study their growth mechanisms. At 5
torr, we could find that increased as the substrate
temperature reduced the growth rate ratio of chloromethane to
methane. For example, when the substrate temperature decreased
from 850C to 650C, the ratio of growth rate increased from 1.03
to 1.39. However, at 30 torr, the growth rates of chloromethane
and methane were almost the same at all substrate temperature.
Furthermore, the difference of growth rates at 2 torr was even
more pronounced than that at 5 torr. The ratio of growth rates
increased from 1.24 to 1.65 as the substrate temperature
dropped from 850C to 650C. The activation energies of diamond
film deposition using rarious carbon sources could be
accurately measured by the LRI method. For the diamond film
growth using methane, the activa- tion energies are 5.3Kcal/
mol at high temperature(800~900C) and 11.8Kcal/mol at low
temperatures (500~800C).
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