Sensitivity Analysis of Localized Gap State Parameters on the Optoelectronic Characteristics in Intrinsic Hydrogenated Amorphous Silicon
碩士 === 大葉大學 === 電機工程研究所 === 82 === In this thesis, numerical modeling is used to carry out the sensitivity analysis of gap state parameters on the optoelctronic ，properties of intrinsic hydrogenated amorphous silicon (a-Si:H).Furthermore, t...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1994
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| Online Access: | http://ndltd.ncl.edu.tw/handle/86693622329688096778 |