Optical Study of Valence Band Splitting in Diluted Magnetic Semiconductors

• Main Authors: Chern-Yu,Ker, 陳余各
• Other Authors: Chou,Wu Ching
• Format: Others
• Language: zh-TW
• Published: 1994
• Online Access: http://ndltd.ncl.edu.tw/handle/93700839786869811798

碩士 === 中原大學 === 應用物理學系 === 82 === The strain induced and crystal field induced valence band splitting in the diluted magnetic semiconductors were studied. In the studies of the strain induced valence band splitting,the ZnSe-based diluted magnetic semiconductor epilayers grown on the GaAs substrate were investigated by various optical spectroscopic techniques. We have found that the strain induced heavy-light hole splitting depend on the thickness of the epilayer as well as the magnetic ion concetration. Whereas, in the work on the crystal field induced valence band splitting, the CdS- and CdSe-based diluted magnetic semiconductor bulk crystal were used. It is found that the crystal field splitting is practically magnetic ion independent for the CdSe based crystal, while in the case of CdS based samples a strong influence of magnetic ion substitution on crystal field splitting is observed.