The Fabrication of Radication Detectors by Zinc Cadium Telluride
碩士 === 中原大學 === 應用物理學系 === 82 === Zinc Cadium Telluide feed crystal were synthesized by temperatu- re gradient solution growth method.It was doped suitable quanti- ty of CdCl2(about 2000ppm) to compensate Cd vacancy during the process of cr...
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ndltd-TW-082CYCU05040062016-02-10T04:08:56Z http://ndltd.ncl.edu.tw/handle/84016198786908249781 The Fabrication of Radication Detectors by Zinc Cadium Telluride 碲化鋅鎘輻射偵檢器的研製 Lai,Li Shyue 賴理學 碩士 中原大學 應用物理學系 82 Zinc Cadium Telluide feed crystal were synthesized by temperatu- re gradient solution growth method.It was doped suitable quanti- ty of CdCl2(about 2000ppm) to compensate Cd vacancy during the process of crystal growth.And we got high resistivity of crysta- l(5.95*108Ω-cm).Then we used metal- semiconductor as electroless planting contact,so detectors with surface barrier and photocon- ductor type were fabricated. Meanwhile,using 241Am,57Co Gamma-ray to estimate its characteristic of nuclear ratiation detectors. After measurement,we find that the leakage of surface barrier t- ype is 1nA,but 10nA for photoconductor type when the reverse bi- as is 100V.However the photoconductor type has a good absorptio- n ability with high energy Gamma- ray,and there was no phenomen- on of polarization occured.After annealing at 100℃ 2 hour,it has an energy resolution of 4.37KeV for 57Co Gamma-ray. Ro,Chin Sheng 樂錦盛 1994 學位論文 ; thesis 65 zh-TW |
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碩士 === 中原大學 === 應用物理學系 === 82 === Zinc Cadium Telluide feed crystal were synthesized by
temperatu- re gradient solution growth method.It was doped
suitable quanti- ty of CdCl2(about 2000ppm) to compensate Cd
vacancy during the process of crystal growth.And we got high
resistivity of crysta- l(5.95*108Ω-cm).Then we used metal-
semiconductor as electroless planting contact,so detectors with
surface barrier and photocon- ductor type were fabricated.
Meanwhile,using 241Am,57Co Gamma-ray to estimate its
characteristic of nuclear ratiation detectors. After
measurement,we find that the leakage of surface barrier t- ype
is 1nA,but 10nA for photoconductor type when the reverse bi- as
is 100V.However the photoconductor type has a good absorptio- n
ability with high energy Gamma- ray,and there was no phenomen-
on of polarization occured.After annealing at 100℃ 2 hour,it
has an energy resolution of 4.37KeV for 57Co Gamma-ray.
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author2 |
Ro,Chin Sheng |
author_facet |
Ro,Chin Sheng Lai,Li Shyue 賴理學 |
author |
Lai,Li Shyue 賴理學 |
spellingShingle |
Lai,Li Shyue 賴理學 The Fabrication of Radication Detectors by Zinc Cadium Telluride |
author_sort |
Lai,Li Shyue |
title |
The Fabrication of Radication Detectors by Zinc Cadium Telluride |
title_short |
The Fabrication of Radication Detectors by Zinc Cadium Telluride |
title_full |
The Fabrication of Radication Detectors by Zinc Cadium Telluride |
title_fullStr |
The Fabrication of Radication Detectors by Zinc Cadium Telluride |
title_full_unstemmed |
The Fabrication of Radication Detectors by Zinc Cadium Telluride |
title_sort |
fabrication of radication detectors by zinc cadium telluride |
publishDate |
1994 |
url |
http://ndltd.ncl.edu.tw/handle/84016198786908249781 |
work_keys_str_mv |
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