The electronic and optical properties of strained layer InGaAs/GaAs single quantum well

碩士 === 國立臺灣大學 === 電機工程研究所 === 81 ===

Bibliographic Details
Main Authors: DING, YAN-LING, 丁彥伶
Other Authors: LI, SI-CEN
Format: Others
Language:zh-TW
Published: 1993
Online Access:http://ndltd.ncl.edu.tw/handle/12412066737695442854
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spelling ndltd-TW-081NTU024420292016-02-10T04:08:42Z http://ndltd.ncl.edu.tw/handle/12412066737695442854 The electronic and optical properties of strained layer InGaAs/GaAs single quantum well 應力層砷化銦鎵/砷化鎵單量子井之電光特性 DING, YAN-LING 丁彥伶 碩士 國立臺灣大學 電機工程研究所 81 LI, SI-CEN 李嗣涔 1993 學位論文 ; thesis 83 zh-TW
collection NDLTD
language zh-TW
format Others
sources NDLTD
description 碩士 === 國立臺灣大學 === 電機工程研究所 === 81 ===
author2 LI, SI-CEN
author_facet LI, SI-CEN
DING, YAN-LING
丁彥伶
author DING, YAN-LING
丁彥伶
spellingShingle DING, YAN-LING
丁彥伶
The electronic and optical properties of strained layer InGaAs/GaAs single quantum well
author_sort DING, YAN-LING
title The electronic and optical properties of strained layer InGaAs/GaAs single quantum well
title_short The electronic and optical properties of strained layer InGaAs/GaAs single quantum well
title_full The electronic and optical properties of strained layer InGaAs/GaAs single quantum well
title_fullStr The electronic and optical properties of strained layer InGaAs/GaAs single quantum well
title_full_unstemmed The electronic and optical properties of strained layer InGaAs/GaAs single quantum well
title_sort electronic and optical properties of strained layer ingaas/gaas single quantum well
publishDate 1993
url http://ndltd.ncl.edu.tw/handle/12412066737695442854
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