The Erase Degradation Measurement of flash EPROM by Charge Pumping Technique
碩士 === 國立清華大學 === 電機工程研究所 === 81 === A charge pumping technique has been used to explore the degradation of the flash EPROM cell due to the erase. Although the Fowler-Nordheim tunneling is employed for the erase, it is found that the band-t...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1993
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| Online Access: | http://ndltd.ncl.edu.tw/handle/86334712278549968265 |
| Summary: | 碩士 === 國立清華大學 === 電機工程研究所 === 81 === A charge pumping technique has been used to explore the
degradation of the flash EPROM cell due to the erase. Although
the Fowler-Nordheim tunneling is employed for the erase, it is
found that the band-to-band tunneling induced hot hole
injection is the dominant mechanism for the degradation due to
the erase. Three different source bias Vs has been used to
study the effect of these band-to-band tunneled hot holes. High
level of damages is observed for the large Vs bias. Besides
the charge pumping method, the degradation of the programming
and erasing window and the triode region transconductance Gmmax
due to cycles of grogramming and erasing has also been
performed on the flash EPROM used in practice. The results
show that damages due to erasing sare greater than those due to
programming. No discernible extra degradation of the
electrical parameters such as the Gmmax and the threshold
voltage has been observed although a very large change of the
charge pumping current has been observed. Thus, the charge
pumping method is more sensitive as compared to other
measurement method. The lateral distribution of the damages
has also been studied by applying a reverse bias at the drain
terminal. The erase induced damages have been found to be
located mostly in the n- doublely diffused region.
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