Characterization and Design Guidelines of Submicron LATID (LArge Tilt-angle Implanted Drain) MOS Devices
碩士 === 國立交通大學 === 電子研究所 === 81 === In recent years, various drain structures have been widely ed to alleviate the hot electron effect in submicron MOS devices. Conventional LDD MOS device which has a partial- overlap drain structur...
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| Format: | Others |
| Language: | en_US |
| Online Access: | http://ndltd.ncl.edu.tw/handle/02576611738309258353 |