| Summary: | 碩士 === 國立交通大學 === 電子研究所 === 81 === The thesis studies the contact resistivity of the Ptsi/ p+-
polysilicon and PtSi/n+-polysilicon contact structures
fabricated by conventional, implant-through-silicide (ITS), and
implant-through-mental（ITM）techniques. The contact
resistivity is determined by using the six-terminal CBKR test
structure. The effect of implanted impurity （BF2+ and As+ ）
dose on the contact resistivity is investigated. The contact
resistivity is also studied with respect to the process
temperature of the contact test structure. In addition, SEM
inspection was used to examine the PtSi surface and the PtSi∕
polysilion interface morphology which is correlated to the
contact degradation. It is found that the contact resistivity
of the PtSi∕P+-polysilicon contact structure is lower than
that of the PtSi∕n+-polysilicon contact structure, while the
contact resistivity of the ITS processed samples is lower than
that of the ITM processed ones with BF2+ implantation.For the
PtSi/polysilicon contact structure, good ohmic contact can be
obtained by using the ITS and ITM techniques.For practical
application, the following ITS/ITM process condition is
proposed for a structure with Pt thickness of 300o or PtSi
thickness of 600o; BF2+ implantation at 100keV to a dose of
1E16, annealing temperature 750 to 800℃ for the ITS scheme,
and 650 to 800℃ for the ITM scheme.
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