Monte Carlo Simulation of Ion Implantation
碩士 === 國立交通大學 === 電子研究所 === 81 === A Monte Carlo simulation program has been developed to calcu- late ion range distributions in amorphous single-element targets, ion distributions in multi-element targets such as silicides and silicon diox...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
1986
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| Online Access: | http://ndltd.ncl.edu.tw/handle/28584425338225284422 |