Monte Carlo Simulation of Ion Implantation

• Main Authors: Hsien-Hao Mu, 沐賢豪
• Other Authors: Shuang-Fa Guo
• Format: Others
• Language: en_US
• Published: 1986
• Online Access: http://ndltd.ncl.edu.tw/handle/28584425338225284422

碩士 === 國立交通大學 === 電子研究所 === 81 === A Monte Carlo simulation program has been developed to calcu- late ion range distributions in amorphous single-element targets, ion distributions in multi-element targets such as silicides and silicon dioxide, as well as recoil range distributions in multi- layered targets. Moliere potential, Kr- C potential and universal potential are used alternatively in the program for the calcu- lations of nuclear stopping power. As for electronic stopping power, simulation results of LSS model and ZBL model are compared together with the experimental data. Results obtained by this simulation are in good agreement with experimental data. Some of these give better agreement with experimental data as compared with the TRIM results.