Study on Resistivity of Polysilicon Resistors Structure

• Main Authors: Yi-Huang Wu, 吳怡璜
• Other Authors: Chung-Len Lee; Tan-Fu Lei
• Format: Others
• Language: en_US
• Published: 1993
• Online Access: http://ndltd.ncl.edu.tw/handle/48611133358757232688

碩士 === 國立交通大學 === 電子研究所 === 81 === With regard to single crystalline silicon, the resistivity is independent of geometry, while that of polycrystalline sil- icon thin film depends on the film thickness. The effects of film thickness on the grain size, resistivity, effective free carrier concentration, and mobility of BF2+ - doped or As+ - doped LPCVD polycrystalline silicon films with doping concen- tration 4E+20 cm^-3 and 1E+20 cm^-3 have been studied from 200 nm down to 25 nm. The resistivity increases, and the effective free carrier concentration and mobility decrease as the film thickness decreases. In addition, it is seen that the resis- tivity of polycrystalline silicon film increases after applly- ing hydrogen or oxygen hydrogen/oxygen plasma treatment, espe- cially for the film thickness less than 50 nm.