Two-Dimensional Quantum Well Semiconductor Simulation

• Main Authors: Wen-Jong Yeh, 葉文中
• Other Authors: Tahui Wang
• Format: Others
• Language: en_US
• Online Access: http://ndltd.ncl.edu.tw/handle/88191753479637203363

碩士 === 國立交通大學 === 電子研究所 === 81 === We develop a two-dimensional simulation for quantum well (QW) lasers. The simulation model includes the Poisson equation, continuity equations, Maxwell equation and photon rate equation. The carrier concentrations and the optical gain in the quantum well are evaluated from the Schrodinger equation. The result of the simulation is the laser output power, threshold current, optical field and carrier concentration distributions. In addition,the subband energies in the conductionband and in the valence band, the overlap integral for optical transitions and the lasing frequency are all derived from the simulation. We have applied our model to the graded-index-separate confinement-heterojunction buried-quantum- well (GRINSCH uried-QW) lasers. Good agreement of the output power-currentharacteristics between the experimental and simulation resultss obtained. We also evaluate the dependence of the laserharacteristics in the structure parameters. The best opticalonfinement can be achieved for a GRINSCH width of 0.2 um. Inddition, the lowest threshold current at a quantum- well widthf 120 A is abtained.