The Fabrication of ZnS:TbOF Thin Film Electroluminescent Device by Magnetron Sputtering

• Main Authors: Yuh-Maoh Sun, 孫毓懋
• Other Authors: Meiso Yokoyama and Y.K.Su
• Format: Others
• Language: en_US
• Published: 1993
• Online Access: http://ndltd.ncl.edu.tw/handle/49971989340966872863

碩士 === 國立成功大學 === 電機工程研究所 === 81 === In order to fabricate the high-brightness electro- luminescent( TFEL ) devices, the dependence of crystallinity on growth conditions of the large-area ZnS thin films deposited by the EL- MOCVD system have been studied.It was evident from X-ray diffraction analysis the high-quality ZnS films with a strongly preferred orientation can be grown with the optimum conditions: the substrate temperature , the pressure of reaction chamber, and a mole fraction of H2S to DMZ are 225℃, 30 Torr and 20. The ZnS films have the best crystallographical quality and the smoothest surface. In comparison to the other reports, FWHM which have been reduced below 0.175 in this study show the approbatory value. The atomic ratio of S/Zn evaluated by electron probe microanalyzer( EPMA ) is very close to one. And, the large-area ZnS thin films which have size of 13×19㎝?were grown by the optimum growth conditions. The uniformity in film thickness is not obviously affected in the movable direction of the susceptor and is extremely affected in the unmovable di- rection of that. Further improvement can be done such as the adjustment of slits of inlet nozzle, inlet multi-nozzle or re- production of reduced box installation. Although less than 10% variation in FWHM was calculated, FWHM variation must be fur- ther improved too.