| Summary: | 碩士 === 國立成功大學 === 電機工程研究所 === 81 === The double─heterostructure optoelectronic switch (DOES)
prepared by molecular beam epitaxy have been successfully
fabricated. The switching properties of two-terminal and three-
terminal devices are investigated. Based on current continuity
and charge neutrality equations, a model is given to study the
characteristics of DOES by the method of iteration.Devices
parameters, such as the doping concentration and thickness ofδ(
P+) barrier layer, the width of active region , temperature are
studies how they influence the characteristics of the switching
devices. Finally, experimental results of Diac using DOES are
demonstrated, and discuss the voltage shift of switching and
holding voltages. By the property of change switching voltage
by appling a voltage on the third terminal, we can demonstrate
the implement of OR／NOR logic gate successfully.
|
|---|
