High performance multi-δ-doped InGaAs/GaAs HFET grown by LP-MOCVD
碩士 === 國立成功大學 === 電機工程研究所 === 82 === In this thesis, a series of multi-?doped GaAs/InGaAs/GaAs heterostructure field effect transistors (HFETs) were grown by low-pressure metalogranic chemical vapor deposition. In addit- ion, we carried out...
Main Authors: | , |
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Other Authors: | |
Format: | Others |
Language: | en_US |
Published: |
1993
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Online Access: | http://ndltd.ncl.edu.tw/handle/32g675 |