The Study of GaAs/AlGaAs Power Heterojunction bipolar Transistor
碩士 === 國立成功大學 === 電機工程研究所 === 81 === Due to HBT's high base doping, high electron mobility and high electron velocity, AlGaAs/GaAs power HBT's offer many intrinsic advantages about power application in terms of high fT, high ent d...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
1993
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| Online Access: | http://ndltd.ncl.edu.tw/handle/72400758413714730783 |