Effects of surface states on the electronic structure of .delta.-doped GaAs
碩士 === 國立成功大學 === 物理研究所 === 81 === This paper calculates the electronic struture of GaAs withSi- doped layer near the surface . The dependences of energyvels and the induced electrical field near the surface areudied as functions of doping...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
1993
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| Online Access: | http://ndltd.ncl.edu.tw/handle/88707321225968147046 |
| Summary: | 碩士 === 國立成功大學 === 物理研究所 === 81 === This paper calculates the electronic struture of GaAs withSi-
doped layer near the surface . The dependences of energyvels
and the induced electrical field near the surface areudied as
functions of doping concentration , width and positionthe
doping layer, and the surface condition (with or withoutrface
states ).To explain the observed induced field near therface in
the experiment of Franza Keldysh oscillation (FKO),d Fermi-
level pinning ,here we conclude an existence of surfaceates
with a density greater than 10^13 (eV-cm^2) for GaAs(100)
direction.
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