| Summary: | 碩士 === 國立成功大學 === 材料科學(工程)研究所 === 81 === Aluminum nitride powders were blended with three diff- erent
kinds of low melting glasses respectively 闡 leaded glass
(PBSG) and unleaded glasses designated as BSG1 and BSG2 .
Their compacts were sintered in air between 700C to 1100C for
periods from 7.5 minutes to 240 minutes. The sintering
behaviors and physical properties of the sintered compacts were
examined and studied . Results show that there are complicate
interactions between the PBSG and AlN phases causing the AlN
phase to decompose . For having over 10 % shrinkage , the
addi- tion of PBSG must be greater than 70 wt% . Dense
sintered specimens were obtained by using BSG1 or BSG2 with
amounts greater than 50 wt% and sintered at temperature of
700C- 800C for 1 hr. From X-ray diffraction analysis, aluminum
nitride still retained its crystallinity . The wetting of low-
melting glass to AlN surface was examined by SEM obser- vations
. The experiments show that the samples containing 55 wt% BSG2
sintered at 800C for 3 hrs. possess suitable elec- trical
properties as : the electrical resistivity is about 10 ohmn-cm
, the relative dielectric constant is about 7 (1 MHz), and the
thermal expansion coefficient is about 6x10 /C. It can be
adopted as a material of low temperature cofirable multilayer
substrate for microelectronics packa- ging .
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