The simulation and analysis of transient radiation effects induced by protons on MOS devices
碩士 === 中正理工學院 === 電子工程研究所 === 81 ===
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| Language: | zh-TW |
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1993
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| Online Access: | http://ndltd.ncl.edu.tw/handle/05669454466029786550 |
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ndltd-TW-081CCIT2428025 |
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ndltd-TW-081CCIT24280252015-10-13T17:44:40Z http://ndltd.ncl.edu.tw/handle/05669454466029786550 The simulation and analysis of transient radiation effects induced by protons on MOS devices 矽金氧半元件受質子暫態輻射效應影響之電腦模擬與分析 HUANG, JIA-XU 黃家煦 碩士 中正理工學院 電子工程研究所 81 XU, XUE-QUN 徐學群 1993 學位論文 ; thesis 76 zh-TW |
| collection |
NDLTD |
| language |
zh-TW |
| format |
Others
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| sources |
NDLTD |
| description |
碩士 === 中正理工學院 === 電子工程研究所 === 81 ===
|
| author2 |
XU, XUE-QUN |
| author_facet |
XU, XUE-QUN HUANG, JIA-XU 黃家煦 |
| author |
HUANG, JIA-XU 黃家煦 |
| spellingShingle |
HUANG, JIA-XU 黃家煦 The simulation and analysis of transient radiation effects induced by protons on MOS devices |
| author_sort |
HUANG, JIA-XU |
| title |
The simulation and analysis of transient radiation effects induced by protons on MOS devices |
| title_short |
The simulation and analysis of transient radiation effects induced by protons on MOS devices |
| title_full |
The simulation and analysis of transient radiation effects induced by protons on MOS devices |
| title_fullStr |
The simulation and analysis of transient radiation effects induced by protons on MOS devices |
| title_full_unstemmed |
The simulation and analysis of transient radiation effects induced by protons on MOS devices |
| title_sort |
simulation and analysis of transient radiation effects induced by protons on mos devices |
| publishDate |
1993 |
| url |
http://ndltd.ncl.edu.tw/handle/05669454466029786550 |
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