The simulation and analysis of transient radiation effects induced by protons on MOS devices

The simulation and analysis of transient radiation effects induced by protons on MOS devices

碩士 === 中正理工學院 === 電子工程研究所 === 81 ===

Bibliographic Details
Main Authors:	HUANG, JIA-XU, 黃家煦
Other Authors:	XU, XUE-QUN
Format:	Others
Language:	zh-TW
Published:	1993
Online Access:	http://ndltd.ncl.edu.tw/handle/05669454466029786550

Description
Summary:	碩士 === 中正理工學院 === 電子工程研究所 === 81 ===