A Study of Determining Effective Channel Length and Series Resistance, and Noise Model Comparison for Submicron MOSFETs
碩士 === 國立清華大學 === 電機工程研究所 === 80 === An improved method to determine the effective channel length and parasitic drain/source series resistance is presented. The physical-meanings of the gate-voltage dependent effective channel length and series resistance are also described. This improved method...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1992
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| Online Access: | http://ndltd.ncl.edu.tw/handle/59312503158885899245 |