Studies on heteroepitaxy of AlGaAs/InGap and its luminescent device properties

博士 === 國立清華大學 === 電機工程研究所 === 79 ===

Bibliographic Details
Main Authors: LU,SHUI-QUAN, 盧水泉
Other Authors: YANG,YIN-JUN
Format: Others
Language:zh-TW
Published: 1991
Online Access:http://ndltd.ncl.edu.tw/handle/42768961966686419870
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spelling ndltd-TW-079NTHU24420032016-07-25T04:07:12Z http://ndltd.ncl.edu.tw/handle/42768961966686419870 Studies on heteroepitaxy of AlGaAs/InGap and its luminescent device properties 砷化鋁鎵/磷化銦鎵異質磊晶成長及其發光元件特性之研究 LU,SHUI-QUAN 盧水泉 博士 國立清華大學 電機工程研究所 79 YANG,YIN-JUN WU,MENG-QI 楊銀 吳孟奇 1991 學位論文 ; thesis 150 zh-TW
collection NDLTD
language zh-TW
format Others
sources NDLTD
description 博士 === 國立清華大學 === 電機工程研究所 === 79 ===
author2 YANG,YIN-JUN
author_facet YANG,YIN-JUN
LU,SHUI-QUAN
盧水泉
author LU,SHUI-QUAN
盧水泉
spellingShingle LU,SHUI-QUAN
盧水泉
Studies on heteroepitaxy of AlGaAs/InGap and its luminescent device properties
author_sort LU,SHUI-QUAN
title Studies on heteroepitaxy of AlGaAs/InGap and its luminescent device properties
title_short Studies on heteroepitaxy of AlGaAs/InGap and its luminescent device properties
title_full Studies on heteroepitaxy of AlGaAs/InGap and its luminescent device properties
title_fullStr Studies on heteroepitaxy of AlGaAs/InGap and its luminescent device properties
title_full_unstemmed Studies on heteroepitaxy of AlGaAs/InGap and its luminescent device properties
title_sort studies on heteroepitaxy of algaas/ingap and its luminescent device properties
publishDate 1991
url http://ndltd.ncl.edu.tw/handle/42768961966686419870
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