A study of Cd diffusion into InSb and evaluation of the devices fabricated by this process
博士 === 國立交通大學 === 光電工程研究所 === 78 === InSb p-n junction formed by Cd diffusion using a two7 temperature7 zone technique. The junction depth and diffusion profile were determined by analyzing the capacitance7 voltage measurements of the MIS diodes fabricated on the etc...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1990
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/17512308718490561710 |