A study of Cd diffusion into InSb and evaluation of the devices fabricated by this process

• Main Authors: DU,SHUN-LI, 杜順利
• Other Authors: HUANG,KAI-FENG
• Format: Others
• Language: zh-TW
• Published: 1990
• Online Access: http://ndltd.ncl.edu.tw/handle/17512308718490561710

博士 === 國立交通大學 === 光電工程研究所 === 78 === InSb p-n junction formed by Cd diffusion using a two7 temperature7 zone technique. The junction depth and diffusion profile were determined by analyzing the capacitance7 voltage measurements of the MIS diodes fabricated on the etched wafer. A modified Boltzmann7 Matano method was used to analyze the diffusion profile, diffusion coefficient as a function of carrier concentration was obtained. InSb junction diodes were then fabricated to study the leakage current and breakown mechanism. It was found that diodes fabricated on low carrier concentration substrates （圖表省略） have a rather large reverse breakdown voltage（14V at 77K）. The breakdown voltage decreased as the temperature was decreased, indicating that the mechanism responsible for the breakdown was an avalanche process. Gate controlled diodes were fabricated to study the surface effects. It was concluded that the reverse current was dominated by bulk current, instead of surface current, when the reverse bias voltage was below 3V. InSb MOS field7 effect7 transistors were also fabricated. The MOSFET exhibited high breakdown voltage, which enabled full observation of the current saturation region. Drain current7 voltage characteristics also showed good subthreshold behavior, having an on7 off ratio of. （圖表省略）