| Summary: | 博士 === 國立交通大學 === 光電工程研究所 === 78 === InSb p-n junction formed by Cd diffusion using a two7 temperature7 zone
technique. The junction depth and diffusion profile were determined by
analyzing the capacitance7 voltage measurements of the MIS diodes
fabricated on the etched wafer. A modified Boltzmann7 Matano method was
used to analyze the diffusion profile, diffusion coefficient as a function
of carrier concentration was obtained.
InSb junction diodes were then fabricated to study the leakage current and
breakown mechanism. It was found that diodes fabricated on low carrier
concentration substrates
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have a rather large reverse breakdown voltage（14V at 77K）. The breakdown
voltage decreased as the temperature was decreased, indicating that the
mechanism responsible for the breakdown was an avalanche process. Gate
controlled diodes were fabricated to study the surface effects. It was
concluded that the reverse current was dominated by bulk current, instead
of surface current, when the reverse bias voltage was below 3V.
InSb MOS field7 effect7 transistors were also fabricated. The MOSFET
exhibited high breakdown voltage, which enabled full observation of the
current saturation region. Drain current7 voltage characteristics also
showed good subthreshold behavior, having an on7 off ratio of.
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