Study and fabrication of GaAs negative differential resistance devices by molecular beam epitaxy

博士 === 國立成功大學 === 電機工程研究所 === 78 ===

Bibliographic Details
Main Authors: YAN, KAO-FENG, 嚴考豐
Other Authors: ZHANG, JUN-YAN
Format: Others
Language:zh-TW
Published: 1990
Online Access:http://ndltd.ncl.edu.tw/handle/58219939678809557660
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spelling ndltd-TW-078NCKU24422092015-10-13T15:21:03Z http://ndltd.ncl.edu.tw/handle/58219939678809557660 Study and fabrication of GaAs negative differential resistance devices by molecular beam epitaxy 分子束磊晶成長砷化鎵負電阻元件之研究與製程 YAN, KAO-FENG 嚴考豐 博士 國立成功大學 電機工程研究所 78 ZHANG, JUN-YAN 張俊彥 1990 學位論文 ; thesis 0 zh-TW
collection NDLTD
language zh-TW
format Others
sources NDLTD
description 博士 === 國立成功大學 === 電機工程研究所 === 78 ===
author2 ZHANG, JUN-YAN
author_facet ZHANG, JUN-YAN
YAN, KAO-FENG
嚴考豐
author YAN, KAO-FENG
嚴考豐
spellingShingle YAN, KAO-FENG
嚴考豐
Study and fabrication of GaAs negative differential resistance devices by molecular beam epitaxy
author_sort YAN, KAO-FENG
title Study and fabrication of GaAs negative differential resistance devices by molecular beam epitaxy
title_short Study and fabrication of GaAs negative differential resistance devices by molecular beam epitaxy
title_full Study and fabrication of GaAs negative differential resistance devices by molecular beam epitaxy
title_fullStr Study and fabrication of GaAs negative differential resistance devices by molecular beam epitaxy
title_full_unstemmed Study and fabrication of GaAs negative differential resistance devices by molecular beam epitaxy
title_sort study and fabrication of gaas negative differential resistance devices by molecular beam epitaxy
publishDate 1990
url http://ndltd.ncl.edu.tw/handle/58219939678809557660
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AT yánkǎofēng fēnzishùlěijīngchéngzhǎngshēnhuàjiāfùdiànzǔyuánjiànzhīyánjiūyǔzhìchéng
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