A study on the characteristics of InP MOS structure prepared by photo-CVD
碩士 === 國立成功大學 === 電機工程研究所 === 76 ===
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1988
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Online Access: | http://ndltd.ncl.edu.tw/handle/86094100518160085299 |
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ndltd-TW-076NCKU24420672015-10-13T11:08:30Z http://ndltd.ncl.edu.tw/handle/86094100518160085299 A study on the characteristics of InP MOS structure prepared by photo-CVD 磷化銦金氧半結構特性之研究 HUANG, ZHI-REN 黃志仁 碩士 國立成功大學 電機工程研究所 76 SU, YAN-KUN 蘇炎坤 1988 學位論文 ; thesis 0 zh-TW |
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NDLTD |
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zh-TW |
format |
Others
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碩士 === 國立成功大學 === 電機工程研究所 === 76 ===
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author2 |
SU, YAN-KUN |
author_facet |
SU, YAN-KUN HUANG, ZHI-REN 黃志仁 |
author |
HUANG, ZHI-REN 黃志仁 |
spellingShingle |
HUANG, ZHI-REN 黃志仁 A study on the characteristics of InP MOS structure prepared by photo-CVD |
author_sort |
HUANG, ZHI-REN |
title |
A study on the characteristics of InP MOS structure prepared by photo-CVD |
title_short |
A study on the characteristics of InP MOS structure prepared by photo-CVD |
title_full |
A study on the characteristics of InP MOS structure prepared by photo-CVD |
title_fullStr |
A study on the characteristics of InP MOS structure prepared by photo-CVD |
title_full_unstemmed |
A study on the characteristics of InP MOS structure prepared by photo-CVD |
title_sort |
study on the characteristics of inp mos structure prepared by photo-cvd |
publishDate |
1988 |
url |
http://ndltd.ncl.edu.tw/handle/86094100518160085299 |
work_keys_str_mv |
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