A study on the characteristics of InP MOS structure prepared by photo-CVD

碩士 === 國立成功大學 === 電機工程研究所 === 76 ===

Bibliographic Details
Main Authors: HUANG, ZHI-REN, 黃志仁
Other Authors: SU, YAN-KUN
Format: Others
Language:zh-TW
Published: 1988
Online Access:http://ndltd.ncl.edu.tw/handle/86094100518160085299
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spelling ndltd-TW-076NCKU24420672015-10-13T11:08:30Z http://ndltd.ncl.edu.tw/handle/86094100518160085299 A study on the characteristics of InP MOS structure prepared by photo-CVD 磷化銦金氧半結構特性之研究 HUANG, ZHI-REN 黃志仁 碩士 國立成功大學 電機工程研究所 76 SU, YAN-KUN 蘇炎坤 1988 學位論文 ; thesis 0 zh-TW
collection NDLTD
language zh-TW
format Others
sources NDLTD
description 碩士 === 國立成功大學 === 電機工程研究所 === 76 ===
author2 SU, YAN-KUN
author_facet SU, YAN-KUN
HUANG, ZHI-REN
黃志仁
author HUANG, ZHI-REN
黃志仁
spellingShingle HUANG, ZHI-REN
黃志仁
A study on the characteristics of InP MOS structure prepared by photo-CVD
author_sort HUANG, ZHI-REN
title A study on the characteristics of InP MOS structure prepared by photo-CVD
title_short A study on the characteristics of InP MOS structure prepared by photo-CVD
title_full A study on the characteristics of InP MOS structure prepared by photo-CVD
title_fullStr A study on the characteristics of InP MOS structure prepared by photo-CVD
title_full_unstemmed A study on the characteristics of InP MOS structure prepared by photo-CVD
title_sort study on the characteristics of inp mos structure prepared by photo-cvd
publishDate 1988
url http://ndltd.ncl.edu.tw/handle/86094100518160085299
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