The radiation hardness effect of MOSFET with argon and oxygen implantation

碩士 === 國立清華大學 === 電機工程研究所 === 75 ===

Bibliographic Details
Main Author: 張健怡
Other Authors: LIN, MIN-XIONG
Format: Others
Language:zh-TW
Published: 1992
Online Access:http://ndltd.ncl.edu.tw/handle/90709727140729333783
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spelling ndltd-TW-075NTHU24420692016-02-12T04:10:38Z http://ndltd.ncl.edu.tw/handle/90709727140729333783 The radiation hardness effect of MOSFET with argon and oxygen implantation 氬離子與氧離子佈植技術對MOSFET抗輻射的影響 張健怡 碩士 國立清華大學 電機工程研究所 75 LIN, MIN-XIONG 龔正 1992 學位論文 ; thesis 0 zh-TW
collection NDLTD
language zh-TW
format Others
sources NDLTD
description 碩士 === 國立清華大學 === 電機工程研究所 === 75 ===
author2 LIN, MIN-XIONG
author_facet LIN, MIN-XIONG
張健怡
author 張健怡
spellingShingle 張健怡
The radiation hardness effect of MOSFET with argon and oxygen implantation
author_sort 張健怡
title The radiation hardness effect of MOSFET with argon and oxygen implantation
title_short The radiation hardness effect of MOSFET with argon and oxygen implantation
title_full The radiation hardness effect of MOSFET with argon and oxygen implantation
title_fullStr The radiation hardness effect of MOSFET with argon and oxygen implantation
title_full_unstemmed The radiation hardness effect of MOSFET with argon and oxygen implantation
title_sort radiation hardness effect of mosfet with argon and oxygen implantation
publishDate 1992
url http://ndltd.ncl.edu.tw/handle/90709727140729333783
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AT zhāngjiànyí yàlíziyǔyǎnglízibùzhíjìshùduìmosfetkàngfúshèdeyǐngxiǎng
AT zhāngjiànyí radiationhardnesseffectofmosfetwithargonandoxygenimplantation
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