Development of Deep-level Photo-thermal Spectroscopy and Photo-Carrier Radiometry for the Characterization of Semi-insulating Gallium Arsenide (SI-GaAs)
Semi-insulating gallium arsenide (SI-GaAs) has gained great interest in recent years due to its wide application in optoelectronic devices and high-speed integrated circuits. An important feature of SI-GaAs is the high density of deep-level defect states, which control the electrical properties of t...
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| Language: | en_ca |
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2010
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| Online Access: | http://hdl.handle.net/1807/24918 |