Atomistic study of structural and electronic transport properties of silicon quantum dots for optoelectronic applications
Introduction It is undisputed that the silicon became the material most widely used in electronics in recent decades[1,2]. The qualities of silicon are well known, from its abundance and low cost to its ability to easily combine with oxides, so that the material has become essential in integrated el...
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| Format: | Doctoral Thesis |
| Language: | English |
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Universitat de Barcelona
2014
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| Online Access: | http://hdl.handle.net/10803/145640 |