Low-Energy Charge and Spin Dynamics in Quantum Confined Systems

• Main Author: Rice, William
• Other Authors: Kono, Junichiro
• Format: Others
• Language: English
• Published: 2012
• Subjects: Single-wall carbon nanotubes; intra-excitonic scattering; electron spin resonance; magnetoresistance; terahertz; variable-range hopping; quantum wells; far-infrared radiation
• Online Access: http://hdl.handle.net/1911/64681

Condensed matter systems exhibit a variety of dynamical phenomena at low energy scales, from gigahertz (GHz) to terahertz (THz) frequencies in particular, arising from complex interplay between charge, spin, and lattice. A large number of collective and elementary excitations in solids occur in this frequency range, which are further modified and enriched by scattering, interactions, and disorder. Recent advancements in spectroscopic methods for probing low-energy dynamics allow us to investigate novel aspects of charge and spin dynamics in solids. In this dissertation work, we used direct current (DC) conductivity, GHz, THz, and mid-infrared (MIR) techniques to provide significant new insights into interaction and disorder effects in low-dimensional systems. Specifically, we have studied temperature-dependent magnetoresistance (MR) and electron spin resonance (ESR) in single-wall carbon nanotubes (SWCNTs), intra-exciton scattering in InGaAs quantum wells, and high-field MIR-induced band gaps in graphene. Temperature-dependent resistance and MR were measured in an ensemble of SWCNTs from 0.3 to 350 K. The resistance temperature behavior followed a 3D variable range hopping (VRH) behavior from 0.3 to ~100 K. A positive MR was observed at temperatures above 25 K and could be fit with a spin-dependent VRH model; negative MR was seen at low temperatures. In the GHz regime, the ESR linewidth for SWCNTs was observed to narrow by as much as ~50% as the temperature was increased from 3 to 300 K, a phenomenon known as motional narrowing, suggesting that we are detecting the ESR of hopping spins. From the linewidth change versus temperature, we find the hopping frequency to be 285 GHz. For excitons in InGaAs quantum wells, we demonstrate the manipulation of intra-excitonic populations using intense, narrow-band THz pulses. The THz radiation temporarily quenches the 1s emission, which is then followed by an enhancement and subsequent decay of 2s emission. After the quenching, the 1s emission recovers and then eventually becomes enhanced, a demonstration of energy storage in intra-exciton states known as excitonic shelving. We show that the diffusive Coulomb scattering between the 2p and 2s states produces a symmetry breaking, leading to a THz-field-induced 1s-to-2s exciton population transfer.