THE AVERAGE ENERGY EXPENDED PER IONIZED ELECTRON-HOLE PAIR IN SEMICONDUCTORS
Main Author: | EMERY, FRANK EDWARD |
---|---|
Format: | Others |
Language: | English |
Published: |
2007
|
Subjects: | |
Online Access: | http://hdl.handle.net/1911/14211 |
Similar Items
-
Deep level traps and ionization coefficients of electronics and holes in InP
by: Choudhury, A. N. M.
Published: (1980) -
Electron beam processing of semiconductors
by: McMahon, R. A.
Published: (1980) -
An investigation of hole-storage transients : a contribution to the determination of the protection requirements for semiconductors in thyristor-controlled locomotives
by: Miskulin, M. S.
Published: (1980) -
Modeling and control of a photovoltaic energy system using the state-space averaging technique
by: Tan, Chee Wei, et al.
Published: (2010) -
Contribution of internal ionization processes in semiconductors to radiative losses of relativistic electrons
by: Vasiliev Alexander, et al.
Published: (2020-09-01)