Synthesis and characterization of wide bandgap semiconductors doped with terbium for electroluminescent devices
In this work, stoichiometric, structural and light emission properties of amorphous wide bandgap semiconductor materials doped with terbium are presented. The amorphous nature of the thin films was confirmed by X-ray diffraction under grazing incidence. Fourier transform infrared spectroscopy spe...
Main Author: | Montañez Huamán, Liz Margarita |
---|---|
Other Authors: | Weingärtner, Roland |
Format: | Dissertation |
Language: | Spanish |
Published: |
Pontificia Universidad Católica del Perú
2016
|
Subjects: | |
Online Access: | http://hdl.handle.net/20.500.12404/6999 |
Similar Items
-
Synthesis and characterization of wide bandgap semiconductors doped with terbium for electroluminescent devices
by: Montañez Huamán, Liz Margarita
Published: (2016) -
Structural, luminescence and Judd-Ofelt analysis to study the influence of post-annealing treatment on the AIN:Tb thin films prepared by radiofrequency magnetron sputtering
by: Tucto Salinas, Karem Yoli
Published: (2016) -
Structural, luminescence and Judd-Ofelt analysis to study the influence of post-annealing treatment on the AIN:Tb thin films prepared by radiofrequency magnetron sputtering
by: Tucto Salinas, Karem Yoli
Published: (2016) -
Fabricación y caracterización de diodos emisores de luz con emisión en la región verde azul
by: Juan Carlos Salcedo Reyes
Published: (2017-01-01) -
Preparación de materiales electroluminiscentes basados en compuestos adsorbidos en el interior de sólidos porosos
by: Cabeza Martínez, José Francisco
Published: (2008)