Gallium Oxide Thin Films for Optoelectronic Applications
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Youngstown State University / OhioLINK
2018
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| Online Access: | http://rave.ohiolink.edu/etdc/view?acc_num=ysu1527125539086742 |
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ndltd-OhioLink-oai-etd.ohiolink.edu-ysu15271255390867422021-08-03T07:06:58Z Gallium Oxide Thin Films for Optoelectronic Applications Isukapati, Sundar Babu Engineering Materials Science Solid State Physics Gallium Oxide thin films magnetron sputtering single crystal Gallium oxide (Ga<sub>2</sub>O<sub>3</sub>) belongs to the family of transparent conducting oxides (TCOs) which have emerged as attractive semiconductor material due their excellent properties. TCOs offer the combination of high conductivity along with excellent transparency in the visible region and a large direct band gap of 4.9 eV. These open the scope for applications for deep UV optical and high power/high voltage electronic device applications.The objective of this research was to fabricate high quality Ga<sub>2</sub>O<sub>3</sub> thin films by magnetron sputtering which would be used to fabricate optoelectronic devices. The thin films were deposited on double polished c-plane sapphire substrates. Four investigations were conducted in order to optimize the quality of the thin films. First, the effect of using different Ar/O<sub>2</sub> mixture for deposition was investigated. Second, the post deposition annealing was investigated where the films were annealed in vacuum and in different gas environments. Third, the effect of different substrate temperature from 20 ℃ to 800 ℃ was investigated. The fourth investigation was where different amounts of tin were introduced in order to perform n-type doping of the films. The structural and elemental compositional properties of the films were determined using x-ray diffraction and energy dispersive spectrometry measurements. ( ¯2 0 1 ) oriented ß-Ga<sub>2</sub>O<sub>3</sub> single crystal thin films were obtained when deposited using 100 % Ar at 500 ℃. The optical characteristics obtained by UV-VIS spectroscopy measurements showed excellent transmission of 90 - 95% and optical bandgaps of 4.7- 5.0 eV. Addition of tin dopants in the films produced a decrease in the optical bandgaps with increasing concentration of tin to the films. 2018-05-30 English text Youngstown State University / OhioLINK http://rave.ohiolink.edu/etdc/view?acc_num=ysu1527125539086742 http://rave.ohiolink.edu/etdc/view?acc_num=ysu1527125539086742 unrestricted This thesis or dissertation is protected by copyright: all rights reserved. It may not be copied or redistributed beyond the terms of applicable copyright laws. |
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NDLTD |
| language |
English |
| sources |
NDLTD |
| topic |
Engineering Materials Science Solid State Physics Gallium Oxide thin films magnetron sputtering single crystal |
| spellingShingle |
Engineering Materials Science Solid State Physics Gallium Oxide thin films magnetron sputtering single crystal Isukapati, Sundar Babu Gallium Oxide Thin Films for Optoelectronic Applications |
| author |
Isukapati, Sundar Babu |
| author_facet |
Isukapati, Sundar Babu |
| author_sort |
Isukapati, Sundar Babu |
| title |
Gallium Oxide Thin Films for Optoelectronic Applications |
| title_short |
Gallium Oxide Thin Films for Optoelectronic Applications |
| title_full |
Gallium Oxide Thin Films for Optoelectronic Applications |
| title_fullStr |
Gallium Oxide Thin Films for Optoelectronic Applications |
| title_full_unstemmed |
Gallium Oxide Thin Films for Optoelectronic Applications |
| title_sort |
gallium oxide thin films for optoelectronic applications |
| publisher |
Youngstown State University / OhioLINK |
| publishDate |
2018 |
| url |
http://rave.ohiolink.edu/etdc/view?acc_num=ysu1527125539086742 |
| work_keys_str_mv |
AT isukapatisundarbabu galliumoxidethinfilmsforoptoelectronicapplications |
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1719454185455353856 |