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spelling ndltd-OhioLink-oai-etd.ohiolink.edu-wright12816459392021-08-03T06:17:13Z An Automated Approach to a 90-nm CMOS DRFM DSSM Circuit Design Hopkins, Thomas A. Electrical Engineering digital single sideband modulator DSSM digital radio frequency memory DRFM Radiation hardened rad hard radiation hardened by design RHBD electronic warfare EW automated guard ring guard band single event transient SET <p>A digital single sideband modulator (DSSM) for a digital radio frequency memory (DRFM) was designed and implemented in a commercial 90-nm radiation-hardened-by-design (RHBD) structured ASIC by Thomas Pemberton in cite{Pemberton}. This thesis synthesized the same DSSM structure in a non-hardened 90-nm commercial process and compared the synthesis results of the two for power, delay, and area. The number of I/O bits and taps in cite{Pemberton} and this thesis were purposely made high to create a large target for radiation testing. As should be expected, the RHBD DSSM reported greater power and area. However, the RHBD power models were only estimates.</p><p>This thesis also showed the costs and benefits for varying bit widths, number of filter taps, and ROM sizes in the DSSM, synthesized at a typical characterization corner. One of the designs was also synthesized at two more characterization corners. Finally, another design variation was tested with extra piping in the Hilbert filter. All of these circuits were measured for power, timing, critical path, area, and spur-free dynamic range (SFDR). </p><p>Chip area was found to be solely dependent on the number of I/O pads and thus went up with greater I/O bit widths. Greater I/O bit widths and number of taps also led to more cell area and power consumption. The 16-bit/153-tap and 24-bit/101-tap typical-corner DSSM's and the 16-bit/101-tap slow-corner DSSM could not meet the synthesis target of 100 MHz. Setup circuitry for the ROM address became the critical path for some of the designs partly due to the fact that the address was set up on the falling edge of the clock but loaded on the rising edge. Increasing I/O bit widths and the number of filter taps improved frequency response and SFDR. Finally, increasing ROM size increased maximum SFDR for a select range of input frequencies. For SFDR, the predominant spur was the suppressed sideband, which was poorly suppressed.</p> 2010-10-18 English text Wright State University / OhioLINK http://rave.ohiolink.edu/etdc/view?acc_num=wright1281645939 http://rave.ohiolink.edu/etdc/view?acc_num=wright1281645939 unrestricted This thesis or dissertation is protected by copyright: all rights reserved. It may not be copied or redistributed beyond the terms of applicable copyright laws.
collection NDLTD
language English
sources NDLTD
topic Electrical Engineering
digital single sideband modulator
DSSM
digital radio frequency memory
DRFM
Radiation hardened
rad hard
radiation hardened by design
RHBD
electronic warfare
EW
automated
guard ring
guard band
single event transient
SET
spellingShingle Electrical Engineering
digital single sideband modulator
DSSM
digital radio frequency memory
DRFM
Radiation hardened
rad hard
radiation hardened by design
RHBD
electronic warfare
EW
automated
guard ring
guard band
single event transient
SET
Hopkins, Thomas A.
An Automated Approach to a 90-nm CMOS DRFM DSSM Circuit Design
author Hopkins, Thomas A.
author_facet Hopkins, Thomas A.
author_sort Hopkins, Thomas A.
title An Automated Approach to a 90-nm CMOS DRFM DSSM Circuit Design
title_short An Automated Approach to a 90-nm CMOS DRFM DSSM Circuit Design
title_full An Automated Approach to a 90-nm CMOS DRFM DSSM Circuit Design
title_fullStr An Automated Approach to a 90-nm CMOS DRFM DSSM Circuit Design
title_full_unstemmed An Automated Approach to a 90-nm CMOS DRFM DSSM Circuit Design
title_sort automated approach to a 90-nm cmos drfm dssm circuit design
publisher Wright State University / OhioLINK
publishDate 2010
url http://rave.ohiolink.edu/etdc/view?acc_num=wright1281645939
work_keys_str_mv AT hopkinsthomasa anautomatedapproachtoa90nmcmosdrfmdssmcircuitdesign
AT hopkinsthomasa automatedapproachtoa90nmcmosdrfmdssmcircuitdesign
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