AlGaN/GaN HEMT Topology Investigation Using Measured Data and Device Modeling
Main Author: | Langley, Derrick |
---|---|
Language: | English |
Published: |
Wright State University / OhioLINK
2007
|
Subjects: | |
Online Access: | http://rave.ohiolink.edu/etdc/view?acc_num=wright1177728294 |
Similar Items
-
Processing and characterization of advanced AlGaN/GaN heterojunction effect transistors
by: Lee, Jaesun
Published: (2006) -
Physics-Based TCAD Simulation and Calibration of 600 V GaN/AlGaN/GaN Device Characteristics and Analysis of Interface Traps
by: Yu-Lin Song, et al.
Published: (2021-06-01) -
Caractérisation électrique d’hétérostructures AlGaN/GaN pour des applications de puissance
by: Lehmann, Jonathan
Published: (2015) -
A Study on the Optimized Ohmic Contact Process of AlGaN/GaN-Si MIS-HEMTs
by: He Guan, et al.
Published: (2021-01-01) -
Effects of GaN Buffer Resistance on the Device Performances of AlGaN/GaN HEMTs
by: Ki-Sik Im, et al.
Published: (2020-09-01)