Optical Memory Device Structure Using Vertical Interference From Digital Thin Films

Optical Memory Device Structure Using Vertical Interference From Digital Thin Films

Bibliographic Details
Main Author: Chi, Robert Chih-Jen
Language:English
Published: University of Cincinnati / OhioLINK 2001
Subjects:
optical memory
interference
dielectric
thin film
milling
Online Access:http://rave.ohiolink.edu/etdc/view?acc_num=ucin988039043
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spelling ndltd-OhioLink-oai-etd.ohiolink.edu-ucin9880390432021-08-03T06:16:02Z Optical Memory Device Structure Using Vertical Interference From Digital Thin Films Chi, Robert Chih-Jen optical memory interference dielectric thin film milling <p>The objective of this dissertation research was to create a high-density optical memory device. From an engineering point of view, to create a promising durable optical memory device with high density requires a simple, efficient, effective storage method. This need led to the concept of creating a three-dimensional memory by storage of many bits data in a single physical location. Unlike conventional multi-layer 3D structure, this was accomplished in a single layer structure using a dielectric thin film. The resulting digital thin-film (DTF) structure was investigated in order to prove and demonstrate that the vertical interference properties of micro-scale Fabry-Perot filters array can be used as the basis for optical data storage cells.</p><p>Optical memory devices are conventionally fabricated by laser beam processing. In this work, a Ga<sup>+</sup> focused ion beam was used to “write” data on a SiO<sub>2</sub> film grown on Si as proof of concept and demonstration of this DTF structure. The use of FIB milling has the advantage of creating smaller data storage elements and higher data density since the ion beam can be focused into a much smaller spot size than that of lasers. The FIB-written data creates a sub-micron structure with multiple bit capacity per physical location and can be read by far-field optical detection methods. A bit density of 5 Gbit/in<sup>2</sup> which is roughly double the current storage density of a DVD has been obtained. The extended lifetime of data stored on a robust material such as SiO<sub>2</sub>/Si produces a data storage option with excellent survival under harsh environment such as high temperature, radiation, etc.</p> 2001-10-11 English text University of Cincinnati / OhioLINK http://rave.ohiolink.edu/etdc/view?acc_num=ucin988039043 http://rave.ohiolink.edu/etdc/view?acc_num=ucin988039043 unrestricted This thesis or dissertation is protected by copyright: all rights reserved. It may not be copied or redistributed beyond the terms of applicable copyright laws.
collection NDLTD
language English
sources NDLTD
topic optical memory
interference
dielectric
thin film
milling
spellingShingle optical memory
interference
dielectric
thin film
milling
Chi, Robert Chih-Jen
Optical Memory Device Structure Using Vertical Interference From Digital Thin Films
author Chi, Robert Chih-Jen
author_facet Chi, Robert Chih-Jen
author_sort Chi, Robert Chih-Jen
title Optical Memory Device Structure Using Vertical Interference From Digital Thin Films
title_short Optical Memory Device Structure Using Vertical Interference From Digital Thin Films
title_full Optical Memory Device Structure Using Vertical Interference From Digital Thin Films
title_fullStr Optical Memory Device Structure Using Vertical Interference From Digital Thin Films
title_full_unstemmed Optical Memory Device Structure Using Vertical Interference From Digital Thin Films
title_sort optical memory device structure using vertical interference from digital thin films
publisher University of Cincinnati / OhioLINK
publishDate 2001
url http://rave.ohiolink.edu/etdc/view?acc_num=ucin988039043
work_keys_str_mv AT chirobertchihjen opticalmemorydevicestructureusingverticalinterferencefromdigitalthinfilms
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