Doped GaN grown by Phase Shift Epitaxy, fabrication and characterization of GaN:Eu LED

Doped GaN grown by Phase Shift Epitaxy, fabrication and characterization of GaN:Eu LED

Bibliographic Details
Main Author: Zhong, Mingyu
Language:English
Published: University of Cincinnati / OhioLINK 2013
Subjects:
Materials Science
MBE
PSE
Rare Earth doping
p type GaN
Nitrde semiconductor
crystal growth
Online Access:http://rave.ohiolink.edu/etdc/view?acc_num=ucin1384427470

Internet

http://rave.ohiolink.edu/etdc/view?acc_num=ucin1384427470

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